零件编号
STP3N150
Other PDF
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page
15 Pages
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756.8 kB
生产厂家
STMicroelectronics
STP3N150(2010) 数据手册 ( 数据表 ) - STMicroelectronics
STMicroelectronics
Description
Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.
FEATUREs
■ 100% avalanche tested
■ Intrinsic capacitances and Qg minimized
■ High speed switching
■ Fully isolated TO-3PF plastic package
■ Creepage distance path is 5.4 mm (typ.) for
TO-3PF
APPLICATION
Switching applications
零件编号
产品描述 (功能)
视图
生产厂家
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