STP30NE06L 数据手册 ( 数据表 ) - STMicroelectronics

DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturingreproducibility.

■ TYPICAL RDS(on) = 0.035 Ω
■ 100% AVALANCHE TESTED
■ LOW GATE CHARGE
■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS
■ DC MOTOR CONTROL
■ DC-DC & DC-AC CONVERTERS
■ SYNCHRONOUS RECTIFICATION