STP2NA50 数据手册 ( 数据表 ) - STMicroelectronics
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STMicroelectronics
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
■ TYPICAL RDS(on) = 3.25 Ω
■ ± 30V GATE TO SOURCE VOLTAGE RATING
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100°C
■ LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
■ REDUCED THRESHOLD VOLTAGE SPREAD
APPLICATIONS
■ MEDIUM CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ CONSUMER AND INDUSTRIAL LIGHTING
N-Channel Enhancement Mode Power MOS Transistor
ARTSCHIP ELECTRONICS CO.,LMITED.
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STMicroelectronics
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
Unspecified
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STMicroelectronics
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STMicroelectronics
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STMicroelectronics