STP18NM60ND 数据手册 ( 数据表 ) - STMicroelectronics

Description
These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters.

FEATUREs
• The worldwide best RDS(on)* area amongst the
   fast recovery diode devices
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
• Extremely high dv/dt and avalanche
   capabilities

APPLICATIONs
• Switching applications