STP11NM80(2005) 数据手册 ( 数据表 ) - STMicroelectronics
生产厂家

STMicroelectronics
DESCRIPTION
The MDmesh™ associates the Multiple Drain process with the Company’s PowerMesh™ horizontal layout assuring an oustanding low on-resistance. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
General Features
■ TYPICAL RDS(on) = 0.35 Ω
■ LOW GATE INPUT RESISTANCE
■ LOW INPUT CAPACITANCE AND GATE
CHARGE
■ BEST RDS(on)*Qg IN THE INDUSTRY
APPLICATIONS
The 800 V MDmesh™ family is very suitable for
single switch applications in particular for Flyback
and Forward converter topologies and for ignition
circuits in the field of lighting.
N-channel 800V - 0.78?- 9A - TO-220/FP-TO-247 Zener-protected superMESH MOSFET
Unspecified
N-channel 800V - 0.78?- 9A - TO-220/FP-TO-247 Zener-protected superMESH MOSFET
STMicroelectronics
N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH? Power MOSFET
New Jersey Semiconductor
N-channel 900V - 1.1? - 8A - TO-220 /FP- D2PAK - TO-247 Zener-protected superMESH? MOSFET
STMicroelectronics
N-channel 800V - 0.65? - 10.5A - TO-220 - D2PAK - TO-247 Zener - Protected SuperMESH? Power MOSFET ( Rev : 2007 )
STMicroelectronics
N-channel 500V - 0.34? - 14A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-protected SuperMESHTM Power MOSFET
STMicroelectronics
N-channel 500V - 0.34? - 14A TO-220/FP/D2PAK/I2PAK/TO-247
Zener-protected SuperMESHTM Power MOSFET
Unspecified
N-CHANNEL 600V - 0.19 ? - 22A TO-220/FP/D2PAK/I2PAK/TO-247 MDmesh? Power MOSFET
STMicroelectronics
N-channel 600V - 0.140? - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh? Power MOSFET ( Rev : 2007 )
STMicroelectronics
N-CHANNEL 700V - 1? - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH? Power MOSFET
STMicroelectronics