STN878 数据手册 ( 数据表 ) - STMicroelectronics

Description
The devices are manufactured in low voltage NPN planar technology with “base island” layout. the resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.

FEATUREs
■ Very low collector to emitter saturation voltage
■ DC current gain, hFE >100
■ 5 A continuous collector current

APPLICATIONs
■ Power management in portable equipment
■ Voltage regulation in bias supply circuits
■ Switching regulator in battery charger applications
■ Heavy load driver