STN4NE03L 数据手册 ( 数据表 ) - STMicroelectronics

DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronics unique ” Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.037 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ AVALANCHERUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS
■ DC MOTOR CONTROL (DISK DRIVES, etc.)
■ DC-DC & DC-AC CONVERTERS
■ SYNCHRONOUS RECTIFICATION
■ POWER MANAGEMENT IN BATTERY-OPERATED AND PORTABLE EQUIPMENT