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STM6970 数据手册 ( 数据表 ) - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

零件编号

STM6970

产品描述 (功能)

N-Channel MOSFET uses advanced trench technology

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SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Description：

This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

Features：

1) VDS=60V,ID=8A,RDS(ON)<20mΩ @VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra RDS(ON).

5) Excellent package for good heat dissipation.

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