STL128DN 数据手册 ( 数据表 ) - STMicroelectronics

Description
The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies.

FEATUREs
■ High voltage capability
■ Low spread of dynamic parameters
■ Very high switching speed
■ Large RBSOA
■ Integrated antiparallel collector-emitter diode

APPLICATIONs
■ Electronic ballast for fluorescent lighting
■ Flyback and forward single transistor low power converters