STGD5NB120SZ 数据手册 ( 数据表 ) - STMicroelectronics

DESCRIPTION
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz). The built in collector-gate zener exibits a very precise active clamping.

General Features
■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
■ LOW ON-VOLTAGE DROP (Vcesat)
■ HIGHT CURRENT CAPABILITY
■ OFF LOSSES INCLUDE TAIL CURRENT
■ HIGH VOLTAGE CLAMPING FEATURES

APPLICATIONS
■ LIGHT DIMMER
■ INRUSH CURRENT LIMITATION
■ PRE-HEATING FOR ELECTRONIC LAMP BALLAST