STFW42N60M2-EP 数据手册 ( 数据表 ) - STMicroelectronics
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STMicroelectronics
Description
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics with very low turn-off switching losses, rendering them suitable for the most demanding very high frequency converters.
FEATUREs
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• Very low turn-off switching losses
• 100% avalanche tested
• Zener-protected
APPLICATIONs
• Switching applications
• Tailored for very high frequency converters
(f > 150 kHz)
N-channel 600 V, 0.078 ? typ., 34 A MDmesh M2 Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packages
STMicroelectronics
N-channel 600 V, 0.076 ? typ., 34 A MDmesh? M2 EP Power MOSFETs in DPAK, TO-220 and TO-247 packages
STMicroelectronics
N-channel 600 V, 0.076 ? typ., 34 A MDmesh? M2 EP Power MOSFETs in DPAK, TO-220 and TO-247 packages ( Rev : 2015 )
STMicroelectronics
N-channel 600 V, 0.078 ? typ., 34 A MDmesh M2 Power MOSFETs in D2PAK, TO-220 and TO-247 packages
STMicroelectronics
N-channel 600 V, 0.108 ? typ., 26 A, MDmesh M2 Power MOSFETs in TO?220FP, I2PAK, TO-220 and TO-247 packages
STMicroelectronics
N-channel 600 V, 1.06 ? typ., 4.5 A MDmesh? M2 Power MOSFETs in TO-220FP, TO-220 and IPAK packages
STMicroelectronics
N-channel 650 V, 0.073 ? typ., 30 A MDmesh? V Power MOSFETs in TO-220FP and TO-3PF packages ( Rev : 2014 )
STMicroelectronics
N-channel 600 V, 0.14 ? typ., 20 A MDmesh? M2 Power MOSFETs in TO-220FP and IPAKFP packages
STMicroelectronics
N-channel 1200 V, 0.62 ? typ., 12 A MDmesh? K5 Power MOSFETs in TO-220FP and TO-3PF packages
STMicroelectronics
N-channel 600 V, 0.550 ? typ., 7.5 A MDmesh? M2 EP Power MOSFET in a TO-220FP package
STMicroelectronics