STF120NF10_17 数据手册 ( 数据表 ) - STMicroelectronics
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STMicroelectronics
Description
This Power MOSFET series has been developed using STMicroelectronics unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
FEATUREs
• Exceptional dv/dt capability
• 100% avalanche tested
• Low gate charge
APPLICATIONs
• Switching applications
N-channel 100 V, 0.009 ?, 110 A STripFET? II Power MOSFET in TO-247, TO-220, DPAK, TO-220FP
STMicroelectronics
N-channel 600 V, 0.135 ? typ., 20 A MDmesh? II Power MOSFET in a TO-220FP package
STMicroelectronics
N-channel 100 V, 2.85 m? typ., 110 A STripFET? F7 Power MOSFET in a TO-220 package
STMicroelectronics
Automotive N-channel 100 V, 4.2 m? typ., 110 A, STripFET F7 Power MOSFET in a TO-220 package
STMicroelectronics
N-channel 100 V, 0.0036 ? typ., 65 A, STripFET? F7 Power MOSFET in a TO-220FP package
STMicroelectronics
N-channel 600 V, 0.28 ?, 11 A MDmesh? II Power MOSFET in TO-220FP
STMicroelectronics
N-channel 600 V, 0.135 ?, 20 A MDmesh? II Power MOSFET in TO-220FP
STMicroelectronics
Automotive-grade N-channel 600 V, 0.17 ? typ., 17 A FDmesh? II Power MOSFET in a TO-220FP package
STMicroelectronics
N-channel 650 V, 0.35 ? typ., 12 A MDmesh? II Power MOSFET in a TO-220FP ultra narrow leads package
STMicroelectronics
N-channel 600 V, 0.255 ? typ., 13 A MDmesh II Plus? low Qg Power MOSFET in a TO-220FP package ( Rev : 2014 )
STMicroelectronics