STD3NB50 数据手册 ( 数据表 ) - STMicroelectronics

DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

■ TYPICAL RDS(on) = 2.5 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED

APPLICATIONS
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
   EQUIPMENT AND UNINTERRUPTIBLE
   POWER SUPPLIES AND MOTOR DRIVE