STC06IE170HV 数据手册 ( 数据表 ) - STMicroelectronics
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STMicroelectronics
Description
The STC06IE170HV is manufactured in Monolithic ESBT technology, aimed to provide the best performance in High Frequency / High voltage applications. It is designed for use in Gate Driven based topologies.
FEATUREs
■ High voltage / high current cascode configuration
■ Low equivalent on resistance
■ Very fast-switch, up to 150 kHz
■ Squared RBSOA, up to 1700 V
■ Very low CISS driven by RG = 47Ω
■ Very low turn-off cross over time
APPLICATION
■ Auxiliary SMPS for three phase mains
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17 ?
STMicroelectronics
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17 ?
STMicroelectronics
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17 ? ( Rev : 2006_09 )
STMicroelectronics
Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.55 ? ( Rev : 2006 )
STMicroelectronics
Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 ?
STMicroelectronics
Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.55 ? ( Rev : 2006 )
STMicroelectronics
Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 ?
STMicroelectronics
Emitter Switched Bipolar Transistor ESBT 950V - 12A - 0.083?
STMicroelectronics
Emitter switched bipolar transistor ESBT 1500V - 8A - 0.08 ?
STMicroelectronics
Hybrid emitter switched bipolar transistor ESBT 2200V - 3A - 0.33 ? ( Rev : 2006 )
STMicroelectronics