STB80NE06-10 数据手册 ( 数据表 ) - STMicroelectronics

DESCRIPTION
This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.0085 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ APPLICATION ORIENTED CHARACTERIZATION
■ FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE

APPLICATIONS
■ SOLENOID AND RELAY DRIVERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT