STB55NE06 数据手册 ( 数据表 ) - STMicroelectronics

DESCRIPTION
This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.019 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ LOW GATE CHARGE 100 °C
■ HIGH dv/dt CAPABILITY
■ APPLICATION ORIENTED CHARACTERIZATION
■ FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE

APPLICATIONS
■ DC MOTOR CONTROL
■ DC-DC & DC-AC CONVERTERS
■ SYNCHRONOUS RECTIFICATION