STB45NF06(2012) 数据手册 ( 数据表 ) - STMicroelectronics

Description
This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications,
and applications with low gate charge driving
requirements.

FEATUREs
■ Typical RDS(on) = 0.022 Ω
■ Exceptional dv/dt capability
■ 100% avalanche tested
■ Standard threshold drive

APPLICATIONs
■ Switching applications