零件编号
STB45N60DM2AG
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STB45N60DM2AG(2015) 数据手册 ( 数据表 ) - STMicroelectronics
STMicroelectronics
Description
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
FEATUREs
• Designed for automotive applications and
AEC-Q101 qualified
• Fast-recovery body diode
• Extremely low gate charge and input
capacitance
• Low on-resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
APPLICATIONs
• Switching applications
零件编号
产品描述 (功能)
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生产厂家
N-channel 600 V, 0.085 ? typ., 34 A MDmesh? DM2 Power MOSFET in a DPAK package
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Automotive-grade N-channel 600 V, 0.085 ? typ., 34 A MDmesh? DM2 Power MOSFET in a TO-247 package
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N-channel 600 V, 0.085 ? typ., 34 A MDmesh? DM2 Power MOSFET in a TO-247 package
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Automotive-grade N-channel 500 V, 0.07 ? typ., 35 A MDmesh? DM2 Power MOSFET in a DPAK package
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N-channel 600 V, 0.260 ? typ., 12 A MDMesh? DM2 Power MOSFET in a DPAK package ( Rev : 2016 )
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N-channel 600 V, 0.260 ? typ., 12 A MDmesh DM2 Power MOSFET in a D2PAK package
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N-channel 600 V, 0.310 ? typ., 11 A MDmesh? DM2 Power MOSFET in a DPAK package ( Rev : 2016 )
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N-channel 600 V, 0.310 ? typ., 11 A MDmesh? DM2 Power MOSFET in a DPAK package
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