SC20H12G2 数据手册 ( 数据表 ) - STMicroelectronics

Description
This 20 A, 1200 V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Housed in D²PAK HV, this diode is perfectly suited for a usage in PFC applications, in charging station, DC/DC, easing the compliance to IEC-60664-1.
The STPSC20H12G2-TR will boost performances in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.

FEATUREs
• No or negligible reverse recovery
• Switching behavior independent of temperature
• Robust high voltage periphery
• Operating Tj from -40 °C to 175 °C
• Low VF
• D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
• ECOPACK2 compliant

APPLICATIONs
• EV Charging station
• DC/DC
• PFC