RJL60S5DPE 数据手册 ( 数据表 ) - Renesas Electronics
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Renesas Electronics
Features
• Superjunction MOSFET
• Built-in fast recovery diode
• Low on-resistance
RDS(on) = 0.150 Ω typ. (at ID = 10 A, VGS = 10 V, Ta = 25°C)
• High speed switching
600V - 20A - SJ MOS FET High Speed Power Switching
Renesas Electronics
600V - 20A - SJ MOS FET High Speed Power Switching
Renesas Electronics
600V -30A - SJ MOS FET High Speed Power Switching
Renesas Electronics
600V - 12A - SJ MOS FET High Speed Power Switching
Renesas Electronics
600V - 12A - SJ MOS FET High Speed Power Switching
Renesas Electronics
600V - 12A - SJ MOS FET High Speed Power Switching
Renesas Electronics
600V - 5A - MOS FET High Speed Power Switching
Renesas Electronics
600V - 3A - MOS FET High Speed Power Switching
Renesas Electronics
600V - 1A - MOS FET High Speed Power Switching
Renesas Electronics
600V - 21A - MOS FET High Speed Power Switching
Renesas Electronics
