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RF5117CPCBA 数据手册 ( 数据表 ) - RF Micro Devices

RF5117C image

零件编号
RF5117CPCBA

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page
12 Pages

File Size
364.3 kB

生产厂家
RFMD
RF Micro Devices 

Product Description
The RF5117C is a linear, medium-power, high-efficiency amplifier IC designed specifically for battery-powered WLAN applications such as PC cards, mini PCI, and compact flash applications. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz WLAN and other spread-spectrum transmitters. The device is provided in a 3mmx3mm, 16-pin, leadless chip carrier with a backside ground. The RF5117C is designed to maintain linearity over a wide range of supply voltage and power output


FEATUREs
◾ Single 3.3V Power Supply
◾ +30dBm Saturated Output Power
◾ 26dB Small Signal Gain
◾ High Linearity
◾ 1800MHz to 2800MHz Frequency Range
◾ +17dBm PO, 11G, <3% EVM


APPLICATIONs
◾ IEEE802.11B WLAN Applications
◾ IEEE802.11G WLAN Applications
◾ 2.5GHz ISM Band Applications
◾ Commercial and Consumer Systems
◾ Portable Battery-Powered Equipment
◾ Spread-Spectrum and MMDS Systems

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