RF2132PCBA 数据手册 ( 数据表 ) - RF Micro Devices

Product Description
The RF2132 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 4-cell CDMA/AMPS handheld digital cellular equipment, spread-spectrum systems, and other applications in the 800MHz to 950MHz band. The device is self-contained with 50Ω input and the output can be easily matched to obtain optimum power, efficiency, and linearity characteristics over varying supply and control voltages.

FEATUREs
• Single 4.2V to 5.0V Supply
• Up to 29 dBm Linear Output Power
• 29dB Gain With Analog Gain Control
• 45% Linear Efficiency
• On-board Power Down Mode
• 800MHz to 950MHz Operation

Typical Applications
• 4.8V AMPS Cellular Handsets
• 4.8V CDMA/AMPS Handsets
• 4.8V JCDMA/TACS Handsets
• Driver Amplifier in Cellular Base Stations
• Portable Battery-Powered Equipment