RF2119PCBA 数据手册 ( 数据表 ) - RF Micro Devices

Product Description
The RF2119 is a high-power, high-efficiency amplifier IC targeting 2V to 4V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in hand-held digital cellular equipment, spread spectrum systems, and other applications in the 800MHz to 960MHz band. The device is well suited for either CW or pulsed applications.

FEATUREs
• Single 2V to 5V Supply
• 30dBm Output Power at 2.5V
• 30dB Small Signal Gain
• 53% Efficiency
• On-board Power Down Mode
• 800MHz to 960MHz Operation

Typical Applications
• Two-Way Pagers
• 915MHz ISM Band Equipment
• Spread-Spectrum Systems
• 3V AMPS/ETACS Cellular Handsets
• CDPD Portable Data Cards
• Personal Digital Cellular