PHP29N08T 数据手册 ( 数据表 ) - Nexperia B.V. All rights reserved

General description
   Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

FEATUREs and benefits
◾ High noise immunity due to high gate
   threshold voltage
◾ Low conduction losses due to low
   on-state resistance

APPLICATIONs
◾ Industrial motor control