P4KE20CAHE3 数据手册 ( 数据表 ) - New Jersey Semiconductor

FEATURES
• Glass passivated chip junction
• Available inuni-directional andbi-directional
• 400 W peak pulse power capability with a 10/1000 us waveform, repetitive rate (duty cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Lowincremental surge resistance
• Solder dip 275 °C max. 10s, per JESD 22-B106
• AEC-Q101 qualified