零件编号
P105N3LL
Other PDF
no available.
PDF
page
13 Pages
File Size
802.1 kB
生产厂家
STMicroelectronics
P105N3LL(2015) 数据手册 ( 数据表 ) - STMicroelectronics
STMicroelectronics
Description
This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
FEATUREs
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
APPLICATIONs
• Switching applications
零件编号
产品描述 (功能)
视图
生产厂家
N-channel 30 V, 0.0011 ? typ., 260 A STripFET? H6 Power MOSFET in a PowerFLAT? 5x6 package
STMicroelectronics
N-channel 600 V, 165 m? typ., 18 A, MDmesh DM6 Power MOSFET in a TO?220 package
STMicroelectronics
N-channel 650 V, 39 m? typ., 55 A MDmesh M9 Power MOSFET in a TO-220 package
STMicroelectronics
N-channel 800 V, 2.75 ? typ., 2 A MDmesh K5 Power MOSFET in a TO-220 package
STMicroelectronics
N-channel 650 V, 128 m? typ., 20 A MDmesh M9 Power MOSFET in a TO-220 package
( Rev : 2022 )
STMicroelectronics
N-channel 650 V, 128 m? typ., 20 A MDmesh M9 Power MOSFET in a TO-220 package
STMicroelectronics
N-channel 600 V, 0.395 ? typ., 9 A MDmesh? M2 Power MOSFET in a TO-220 package
STMicroelectronics
N-channel 100 V, 2.85 m? typ., 110 A STripFET? F7 Power MOSFET in a TO-220 package
STMicroelectronics
N-channel 650 V, 0.156 ? typ., 20 A, MDmesh? DM2 Power MOSFET in a TO-220 package
STMicroelectronics
Share Link: 