NAND01GW4B(2006) 数据手册 ( 数据表 ) - STMicroelectronics

Summary description
   The NAND Flash 2112 Byte/ 1056 Word Page is a family of non-volatile Flash memories that uses NAND cell technology. The devices range from 1 Gbit to 2 Gbits and operate with either a 1.8V or 3V voltage supply. The size of a Page is either 2112 Bytes (2048 + 64 spare) or 1056 Words (1024 + 32 spare) depending on whether the device has a x8 or x16 bus width.

FEATURE summary
● High Density NAND Flash memories
   – Up to 2 Gbit memory array
   – Up to 64Mbit spare area
   – Cost effective solutions for mass
      storage applications
● NAND interface
   – x8 or x16 bus width
   – Multiplexed Address/ Data
   – Pinout compatibility for all densities
● Supply voltage
   – 1.8V device: VDD = 1.7 to 1.95V
   – 3.0V device: VDD = 2.7 to 3.6V
● Page size
   – x8 device: (2048 + 64 spare) Bytes
   – x16 device: (1024 + 32 spare) Words
● Block size
   – x8 device: (128K + 4K spare) Bytes
   – x16 device: (64K + 2K spare) Words
● Page Read/Program
   – Random access: 25µs (max)
   – Sequential access: 50ns (min)
   – Page program time: 300µs (typ)
● Copy Back Program mode
   – Fast page copy without external
      buffering
● Cache Program and Cache Read modes
   – Internal Cache Register to improve the
      program and read throughputs
● Fast Block Erase
   – Block erase time: 2ms (typ)
● Status Register
● Electronic Signature
● Chip Enable ‘don’t care’
   – for simple interface with microcontroller
● Serial Number option
● Data protection
   – Hardware and Software Block Locking
   – Hardware Program/Erase locked during
      Power transitions
● Data integrity
   – 100,000 Program/Erase cycles
   – 10 years Data Retention
■ ECOPACK® packages
■ Development tools
   – Error Correction Code software and
      hardware models
   – Bad Blocks Management and Wear
      Leveling algorithms
   – File System OS Native reference
      software
   – Hardware simulation models