NAND01GW4A2B6 数据手册 ( 数据表 ) - Numonyx -> Micron

Description
   The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The NAND01GW3A2B-KGD and NAND01GW4A2B-KGD have a density of 1 Gbits. It operates from a 3V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width.

FEATUREs
◾ High density NAND Flash memory
   – 1 Gbit memory array
   – 32 Mbit spare area
   – Cost effective solutions for mass storage
      applications
◾ NAND interface
   – x 8 or x 16 bus width
   – Multiplexed Address/ Data
   – Pinout compatibility for all densities
◾ Supply voltage:
   – 3.0 V device: VDD = 2.7 to 3.6 V
◾ Page size
   – x 8 device: (512 + 16 spare) bytes
   – x 16 device: (256 + 8 spare) words
◾ Block size
   – x 8 device: (16 K + 512 spare) bytes
   – x 16 device: (8 K + 256 spare) words
◾ Page Read / Program
   – Random access: 15 µs (3 V) (max)
   – Sequential access: 50 ns (min)
   – Page program time: 200 µs (typ)
◾ Copy Back Program mode
   – Fast page copy without external buffering
◾ Fast Block Erase
   – Block erase time: 2 ms (typ)
◾ Status Register
◾ Electronic signature
◾ Chip Enable ‘Don’t care’
   – Simple interface with microcontroller
◾ Serial Number option
◾ Hardware Data Protection
   – Program/Erase locked during Power
      transitions
◾ Data Integrity
   – 100,000 Program/Erase cycles (with ECC)
   – 10 years Data Retention