NAND01GR4B2B 数据手册 ( 数据表 ) - Numonyx -> Micron

Description
   NAND01G-B2B and NAND02G-B2C flash 2112-byte/1056-word page is a family of nonvolatile flash memories that uses NAND cell technology. The devices range from 1 Gbit to 2 Gbits and operate with either a 1.8 V or 3 V voltage supply. The size of a page is either 2112 bytes (2048 + 64 spare) or 1056 words (1024 + 32 spare) depending on whether the device has a x8 or x16 bus width.

FEATUREs
◾ High density NAND flash memories
   – Up to 2 Gbits of memory array
   – Cost effective solutions for mass storage
      applications
◾ NAND interface
   – x8 or x16 bus width
   – Multiplexed address/ data
   – Pinout compatibility for all densities
◾ Supply voltage: 1.8 V/3.0 V
◾ Page size
   – x8 device: (2048 + 64 spare) bytes
   – x16 device: (1024 + 32 spare) words
◾ Block size
   – x8 device: (128 K + 4 K spare) bytes
   – x16 device: (64 K + 2 K spare) words
◾ Page read/program
   – Random access: 25 µs (max)
   – Sequential access: 30 ns (min)
   – Page program time: 200 µs (typ)
◾ Copy back program mode
◾ Cache program and cache read modes
◾ Fast block erase: 2 ms (typ)
◾ Status register
◾ Electronic signature
◾ Chip enable ‘don’t care’
◾ Serial number option
◾ Data protection
   – Hardware block locking
   – Hardware program/erase locked during
      power transitions
◾ Data integrity
   – 100 000 program/erase cycles per block
      (with ECC)
   – 10 years data retention
◾ ECOPACK® packages
◾ Development tools
   – Error correction code models
   – Bad blocks management and wear leveling
      algorithms
   – Hardware simulation models