MSC82100 数据手册 ( 数据表 ) - STMicroelectronics
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STMicroelectronics
DESCRIPTION
The MSC82100 is a hermetically sealed NPN power transistor with a fishbone, emitter finger ballasted geometry utilizing a refractory/gold metallization system. The device is designed specifically for Class A linear applications to provide high gain and high output power at the 1.0 dB compression point.
■ EMITTER BALLASTED
■ CLASS A LINEAR OPERATION
■ COMMON EMITTER
■ VSWR CAPABILITY ∞:1 @ RATED CONDITIONS
■ ft 1.6 GHz TYPICAL
■ NOISE FIGURE 15.5 dB @ 2 GHz
■ POUT = 27 dBm MIN. @ 1.0 GHz
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS
STMicroelectronics
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS
STMicroelectronics
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS
STMicroelectronics
GENERAL PURPOSE LINEAR APPLICATIONS RF & MICROWAVE TRANSISTORS
STMicroelectronics
GENERAL PURPOSE LINEAR APPLICATIONS RF & MICROWAVE TRANSISTORS
STMicroelectronics
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS
STMicroelectronics
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS
STMicroelectronics
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS
STMicroelectronics
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
Advanced Power Technology
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
STMicroelectronics