MJD31C(2007) 数据手册 ( 数据表 ) - STMicroelectronics

Description
The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.

General features
■ Surface-mounting TO-252 power package in
   tape & reel
■ In compliance with the 2002/93/EC European
   Directive

APPLICATIONs
■ General purpose switching and amplifier
   transistor