M95256-RMN5T 数据手册 ( 数据表 ) - STMicroelectronics

DESCRIPTION
These electrically erasable programmable memory (EEPROM) devices are fabricated with STMicroelectronics’ High Endurance, Double Polysilicon, CMOS technology. This guarantees an endurance typically well above one hundred thousand Erase/Write cycles, with a data retention of 40 years. The memories are organised as 32K x 8 bits (M95256) and 16K x 8 bits (M95128), and operate down to 2.5 V (for the -W version of each device), and down to 1.8 V (for the -R version of each device).
The M95256 and M95128 are available in Plastic Dual-in-Line, Plastic Small Outline and Thin Shrink Small Outline packages.

■ SPI Bus Compatible Serial Interface
■ Supports Positive Clock SPI Modes
■ 5 MHz Clock Rate (maximum)
■ Single Supply Voltage:
   – 4.5V to 5.5V for M95xxx
   – 2.5V to 5.5V for M95xxx-W
   – 1.8V to 3.6V for M95xxx-R
■ Status Register
■ Hardware and Software Protection of the Status
   Register
■ BYTE and PAGE WRITE (up to 64 Bytes)
■ Self-Timed Programming Cycle
■ Resizeable Read-Only EEPROM Area
■ Enhanced ESD Protection
■ 100,000 Erase/Write Cycles (minimum)
■ 40 Year Data Retention (minimum)