M58WR032FT70ZB6E 数据手册 ( 数据表 ) - STMicroelectronics

SUMMARY DESCRIPTION
   The M58WR032FT/B is a 32 Mbit (2 Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An optional 12V VPP power supply is provided to speed up customer programming.

FEATURES SUMMARY
◾ SUPPLY VOLTAGE
   – VDD = 1.7V to 2V for Program, Erase and
      Read
   – VDDQ = 1.7V to 2.24V for I/O Buffers
   – VPP = 12V for fast Program (optional)
◾ SYNCHRONOUS / ASYNCHRONOUS READ
   – Synchronous Burst Read mode: 66MHz
   – Asynchronous/ Synchronous Page Read
      mode
   – Random Access: 60ns, 70ns, 80ns
◾ SYNCHRONOUS BURST READ SUSPEND
◾ PROGRAMMING TIME
   – 8µs by Word typical for Fast Factory
      Program
   – Double/Quadruple Word Program option
   – Enhanced Factory Program options
◾ MEMORY BLOCKS
   – Multiple Bank Memory Array: 4 Mbit
      Banks
   – Parameter Blocks (Top or Bottom
      location)
◾ DUAL OPERATIONS
   – Program Erase in one Bank while Read in
      others
   – No delay between Read and Write
      operations
◾ BLOCK LOCKING
   – All blocks locked at Power up
   – Any combination of blocks can be locked
   – WP for Block Lock-Down
◾ SECURITY
   – 128 bit user programmable OTP cells
   – 64 bit unique device number
◾ COMMON FLASH INTERFACE (CFI)
◾ 100,000 PROGRAM/ERASE CYCLES per
   BLOCK
◾ ELECTRONIC SIGNATURE
   – Manufacturer Code: 20h
   – Device Codes:
      M58WR032FT (Top): 8814h
      M58WR032FB (Bottom): 8815h
◾ PACKAGE
   – Compliant with Lead-Free Soldering
      Processes
   – Lead-Free Versions