M29W640GH90ZA6F 数据手册 ( 数据表 ) - Numonyx -> Micron

Description
   The M29W640G is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode.

FEATURE
◾ Supply Voltage
   – VCC = 2.7 to 3.6 V for Program/Erase/Read
   – VPP =12 V for Fast Program (optional)
◾ Asynchronous Random/Page Read
   – Page Width: 4 words
   – Page Access: 25 ns
   – Random Access: 60 ns, 70 ns, 90 ns
◾ Fast Program commands
   – 2 word/4 byte Program (without VPP=12 V)
   – 4 word/8 byte Program (with VPP=12 V)
   – 16 word/32 byte Write Buffer
◾ Programming time
   – 10 µs per byte/word typical
   – Chip Program time: 10 s (4-word Program)
◾ Memory organization
   – M29W640GH/L:
      128 main blocks, 64 Kbytes each
   – M29W640GT/B
      Eight 8 Kbytes Boot blocks (top or bottom)
      127 Main blocks, 64 Kbytes each
◾ Program/Erase controller
   – Embedded byte/word program algorithms
◾ Program/Erase Suspend and Resume
   – Read from any block during Program
      Suspend
   – Read and Program another block during
      Erase Suspend
◾ ECOPACK® packages
◾ 128 word Extended Memory block
   – Extra block used as security block or to
      store additional information
◾ Low power consumption:Standby and
   Automatic Standby
◾ Unlock Bypass Program command
   – Faster Production/Batch Programming
◾ Common Flash Interface: 64-bit Security Code
◾ VPP/WP pin for Fast Program and Write Protect
◾ Temporary Block Unprotection mode
◾ 100,000 Program/Erase cycles per block
◾ Electronic Signature
   – Manufacturer Code: 0020h
   – Device code (see Table 1)