M29F400T-70N6TR 数据手册 ( 数据表 ) - STMicroelectronics

DESCRIPTION
The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. The device
can also be programmed in standard program mers.

M29F400T and M29F400B are replaced respectively by the M29F400BT and M29F400BB
5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
FAST ACCESS TIME: 55ns
FAST PROGRAMMING TIME
 –10µs by Byte / 16µs by Word typical
PROGRAM/ERASE CONTROLLER (P/E.C.)
 – Program Byte-by-Byte or Word-by-Word
 – Status Register bits and Ready/Busy Output
MEMORY BLOCKS
 – Boot Block (Top or Bottom location)
 – Parameter and Main blocks
BLOCK, MULTI-BLOCK and CHIP ERASE
MULTI-BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES
ERASE SUSPEND and RESUME MODES
 – Read and Program another Block during Erase Suspend
LOW POWER CONSUMPTION
 – Stand-by and Automatic Stand-by
100,000 PROGRAM/ERASE CYCLES per BLOCK
20 YEARS DATA RETENTION
 – Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
 – Manufacturer Code: 0020h
 – Device Code, M29F400T: 00D5h
 – Device Code, M29F400B: 00D6h