M29F016B 数据手册 ( 数据表 ) - STMicroelectronics

SUMMARY DESCRIPTION
The M29F016B is a 16 Mbit (2Mb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

■ SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
■ ACCESS TIME: 55ns
■ PROGRAMMING TIME
    – 8µs by Byte typical
■ 32 UNIFORM 64 Kbyte MEMORY BLOCKS
■ PROGRAM/ERASE CONTROLLER
    – Embedded Byte Program algorithm
    – Embedded Multi-Block/Chip Erase algorithm
    – Status Register Polling and Toggle Bits
    – Ready/Busy Output Pin
■ ERASE SUSPEND and RESUME MODES
    – Read and Program another Block during Erase Suspend
■ TEMPORARY BLOCK UNPROTECTION MODE
■ UNLOCK BYPASS PROGRAM COMMAND
    – Faster Production/Batch Programming
■ LOW POWER CONSUMPTION
    – Standby and Automatic Standby
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ 20 YEARS DATA RETENTION
    – Defectivity below 1 ppm/year
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Device Code: ADh