M28W640HCT70N6F 数据手册 ( 数据表 ) - Numonyx -> Micron

Description
   The M28W640HCT and M28W640HCB are 64 Mbit (4 Mbit x 16) non-volatile Flash memories that can be erased electrically at block level and programmed in-system on a word-by-word basis using a 2.7 V to 3.6 V VDD supply. An optional 12V VPP power supply is provided to speed up customer programming.

FEATUREs
◾ Supply voltage
   – VDD = 2.7 V to 3.6 V
   – VPP = 12 V for fast program (optional)
◾ Access times: 70 ns
◾ Asynchronous Page Read mode
   – Page width: 4 words
   – Page access: 25 ns
   – Random access: 70 ns
◾ Programming time:
   – 10 µs typical
   – Double Word Programming option
   – Quadruple Word Programming option
◾ Common Flash interface
◾ Memory blocks
   – Parameter blocks (top or bottom location)
   – Main blocks
◾ Block locking
   – All blocks locked at power-up
   – Any combination of blocks can be locked
   – WP for block lock-down
◾ Security
   – 128 bit user programmable OTP cells
   – 64 bit unique device identifier
◾ Automatic standby mode
◾ Program and Erase Suspend
◾ 100,000 program/erase cycles per block
◾ Electronic signature
   – Manufacturer code: 20h
   – Top device code, M28W640HCT: 8848h
   – Bottom device code, M28W640HCB:
      8849h
◾ Packages
   – ECOPACK® compliant