M28W640FCT85ZB6T 数据手册 ( 数据表 ) - STMicroelectronics

SUMMARY DESCRIPTION
   The M28W640FCT and M28W640FCB are 64 Mbit (4 Mbit x 16) non-volatile Flash memories that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An optional 12V VPP power supply is provided to speed up customer programming.

FEATURES SUMMARY
◾ SUPPLY VOLTAGE
   – VDD = 2.7V to 3.6V Core Power Supply
   – VDDQ= 1.65V to 3.6V for Input/Output
   – VPP = 12V for fast Program (optional)
◾ ACCESS TIME: 70, 85, 90,100ns
◾ PROGRAMMING TIME:
   – 10µs typical
   – Double Word Programming Option
   – Quadruple Word Programming Option
◾ COMMON FLASH INTERFACE
◾ MEMORY BLOCKS
   – Parameter Blocks (Top or Bottom
      location)
   – Main Blocks
◾ BLOCK LOCKING
   – All blocks locked at Power Up
   – Any combination of blocks can be locked
   – WP for Block Lock-Down
◾ SECURITY
   – 128 bit user Programmable OTP cells
   – 64 bit unique device identifier
◾ AUTOMATIC STAND-BY MODE
◾ PROGRAM and ERASE SUSPEND
◾ 100,000 PROGRAM/ERASE CYCLES per
   BLOCK
◾ ELECTRONIC SIGNATURE
   – Manufacturer Code: 20h
   – Top Device Code, M28W640FCT: 8848h
   – Bottom Device Code, M28W640FCB:
      8849h
◾ PACKAGES
   – Compliant with Lead-Free Soldering
      Processes
   – Lead-Free Versions