M28W320FCB10N6E 数据手册 ( 数据表 ) - STMicroelectronics

Summary description
   The M28W640FCT and M28W640FCB are 64 Mbit (4 Mbit x 16) non-volatile Flash memories that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An optional 12V VPP power supply is provided to speed up customer programming.

FEATURE summary
◾ Supply voltage
   – VDD = 2.7V to 3.6V Core Power Supply
   – VDDQ= 1.65V to 3.6V for Input/Output
   – VPP = 12V for fast Program (optional)
◾ Access times: 70, 85, 90,100ns
◾ Programming time:
   – 10µs typical
   – Double Word Programming Option
   – Quadruple Word Programming Option
◾ Common Flash Interface
◾ Memory blocks
   – Parameter Blocks (Top or Bottom location)
   – Main Blocks
◾ Block locking
   – All blocks locked at Power Up
   – Any combination of blocks can be locked
   – WP for Block Lock-Down
◾ Security
   – 128 bit user Programmable OTP cells
   – 64 bit unique device identifier
◾ Automatic standby mode
◾ Program and Erase Suspend
◾ 100,000 program/erase cycles per block
◾ Electronic signature
   – Manufacturer code: 20h
   – Top device code, M28W640FCT: 8848h
   – Bottom device code, M28W640FCB: 8849h
◾ Packages
   – ECOPACK® compliant