M28W320EBT90N6T 数据手册 ( 数据表 ) - STMicroelectronics

SUMMARY DESCRIPTION
   The M28W320EB is a 32 Mbit (2 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/O pin down to 1.65V. An optional 12V VPP power supply is provided to speed up customer programming.

FEATURES SUMMARY
◾ SUPPLY VOLTAGE
   – VDD = 2.7V to 3.6V Core Power Supply
   – VDDQ= 1.65V to 3.6V for Input/Output
   – VPP = 12V for fast Program (optional)
◾ ACCESS TIME: 70, 85, 90,100ns
◾ PROGRAMMING TIME
   – 10µs typical
   – Double Word Programming Option
   – Quadruple Word Programming Option
◾ COMMON FLASH INTERFACE
◾ MEMORY BLOCKS
   – Parameter Blocks (Top or Bottom location)
   – Main Blocks
◾ BLOCK PROTECTION on TWO PARAMETER
   BLOCKS
   – WP for Block Protection
◾ AUTOMATIC STAND-BY MODE
◾ PROGRAM and ERASE SUSPEND
◾ 100,000 PROGRAM/ERASE CYCLES per
   BLOCK
◾ ELECTRONIC SIGNATURE
   – Manufacturer Code: 20h
   – Top Device Code, M28W320EBT: 88BCh
   – Bottom Device Code, M28W320EBB: 88BDh