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LS830 数据手册 ( 数据表 ) - Linear Integrated System
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Linear Integrated System
FEATURES
ULTRA LOW DRIFT |∆VGS1-2 /∆T|= 5µV/°C max.
ULTRA LOW LEAKAGE IG = 80fA TYP.
LOW NOISE en = 70nV/√Hz TYP.
LOW CAPACITANCE CISS= 3pf MAX.
Ultra Low Leakage Low Drift Monolithic Dual JFET
Micross Components
ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER
Linear Technology
LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Linear Integrated System
LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Linear Integrated System
LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Linear Technology
Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET
Micross Components
Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET
Linear Technology
Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET
Micross Components
LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER ( Rev : 2014 )
Linear Technology
ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER
Linear Integrated System
