L6385E 数据手册 ( 数据表 ) - STMicroelectronics

Description
The L6385E is an high-voltage device, manufactured with the BCD"OFF-LINE" technology. It has an Half - Bridge Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CMOS/TTL compatible for ease of interfacing with controlling devices.

FEATUREs
■ High voltage rail up to 600V
■ dV/dt immunity ±50V/nsec in full temperature range
■ Driver current capability:
– 400mA source,
– 650mA sink
■ Switching times 50/30 nsec rise/fall with 1nF load
■ CMOS/TTL Schmitt trigger inputs with hysteresis and pull down
■ Under voltage lock out on lower and upper driving section
■ Internal bootstrap diode
■ Outputs in phase with inputs