KAF-09000-ABA-DD-BA 数据手册 ( 数据表 ) - ON Semiconductor

Description
Combining high resolution with outstanding sensitivity, the KAF−09000 image sensor has been specifically designed to meet the needs of next−generation low cost digital radiography and scientific imaging systems. The high sensitivity available from 12−micron square pixels combines with a low noise architecture to allow system designers to improve overall image quality, or to relax system tolerances to achieve lower cost. The excellent uniformity of the KAF−09000 image sensor improves overall image integrity by simplifying image corrections, while integrated anti−blooming protection prevents image bleed from over−exposure in bright areas of the image. To simplify device integration, the KAF−09000 image sensor uses the same pin−out and package as the KAF−16801 image sensor.
The sensor utilizes the TRUESENSE Transparent Gate Electrode to improve sensitivity compared to the use of a standard front−side illuminated polysilicon electrode.

FEATUREs
• TRUESENSE Transparent Gate Electrode
   for High Sensitivity
• Large Pixel Size
• Large Image Area
• High Quantum Efficiency
• Low Noise Architecture
• Broad Dynamic Range

APPLICATIONs
• Medical
• Scientific