FS5ASJ-06F 数据手册 ( 数据表 ) - Renesas Electronics
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Renesas Electronics
Features
• Drive voltage : 4 V
• VDSS : 60 V
• rDS(ON) (max) : 140 mΩ
• ID : 5 A
• Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 30 ns
APPLICATIONs
Motor control, lamp control, solenoid control, DC-DC converters, etc.
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High-Speed Switching Use Nch Power MOS FET
Renesas Electronics
High-Speed Switching Use Nch Power MOS FET
Renesas Electronics
High-Speed Switching Use Nch Power MOS FET
Renesas Electronics
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High-Speed Switching Use Nch Power MOS FET ( Rev : 2010 )
Renesas Electronics
High-Speed Switching Use Nch Power MOS FET
Renesas Electronics
High-Speed Switching Use Nch Power MOS FET
Renesas Electronics
High-Speed Switching Use Nch Power MOS FET
Renesas Electronics
High-Speed Switching Use Nch Power MOS FET
Renesas Electronics
High-Speed Switching Use Nch Power MOS FET
Renesas Electronics