FDD3670 数据手册 ( 数据表 ) - ON Semiconductor

General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs f eature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

FEATUREs
• 34 A, 100 V. RDS(ON) = 32 mΩ @ VGS = 10 V
                       RDS(ON) = 35 mΩ @ VGS = 6 V
• Low gate charge (57 nC typical)
• Fast switching speed
• High performance trench technology for extremely
   low RDS(ON)
• High power and current handling capability