2STR2230 数据手册 ( 数据表 ) - STMicroelectronics

Description
The device is a PNP transistor manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.

FEATUREs
• Very low collector-emitter saturation voltage
• High current gain characteristic
• Fast switching speed
• Miniature SOT-23 plastic package for surface mounting circuits

APPLICATIONs
• LED
• Motherboard & hard disk drive
• Mobile equipment
• Battery charger
• Voltage regulation