2SC3298B 数据手册 ( 数据表 ) - New Jersey Semiconductor

DESCRIPTION
• Good Linearity of hFE
• High Collector-Emitter Breakdown Voltage-
   V(BR)CEO= 160V(Min)-2SC3298
                     = 180V(Min)-2SC3298A 
                     = 200V(Min)-2SC3298B
• Complement to Type 2SA1306/A/B

APPLICATIONS
• Power amplifier applications.
• Driver stage amplifier applications.