零件编号
2SC3281
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New Jersey Semiconductor
2SC3281 数据手册 ( 数据表 ) - New Jersey Semiconductor
New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Mm)
• Collector-Emitter SaturationVoltage-
: VCE(sat)= 3.0V(Max)@ lc= 10A, IB= 1A
• High Power Dissipation
APPLICATIONS
• Power amplifier applications
• Recommend for 100W high fidelity audio frequency
amplifier output stage applications
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