2SC1569 数据手册 ( 数据表 ) - New Jersey Semiconductor
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New Jersey Semiconductor
DESCRIPTION
• High Collector-Emitter Breakdown Voltage-
:V(BR)CEO= 300V(Min)
• DC Current Gain-
: hFE= 40-170 @IC= 50mA, VCE= 10V
• High Current-Gain Bandwidth Product
APPLICATIONS
• Designed for color TV chroma output applications.
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
Tiger Electronic
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor