零件编号
2SC1567
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New Jersey Semiconductor
2SC1567 数据手册 ( 数据表 ) - New Jersey Semiconductor
New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage •-. : V(BR)CEO= 100V(Min)
• Good Linearity of hFE
• Complement to Type 2SA794
APPLICATIONS
• Designed for low-frequency high power driver.
• Optimum for the driver stage of low-frequency and 40W to 100W output amplifier.
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